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Other articles related with "partially depleted silicon-on-insulator":
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36103 |
Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情) |
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Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs |
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Chin. Phys. B
2017 Vol.26 (3): 36103-036103
[Abstract]
(662)
[HTML 1 KB]
[PDF 721 KB]
(418)
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118503 |
Kai Lu(吕凯), Jing Chen(陈静), Yuping Huang(黄瑜萍), Jun Liu(刘军), Jiexin Luo(罗杰馨), Xi Wang(王曦) |
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Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures |
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Chin. Phys. B
2016 Vol.25 (11): 118503-118503
[Abstract]
(560)
[HTML 1 KB]
[PDF 1579 KB]
(307)
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