Other articles related with "partially depleted silicon-on-insulator":
36103 Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情)
  Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs
    Chin. Phys. B   2017 Vol.26 (3): 36103-036103 [Abstract] (662) [HTML 1 KB] [PDF 721 KB] (418)
118503 Kai Lu(吕凯), Jing Chen(陈静), Yuping Huang(黄瑜萍), Jun Liu(刘军), Jiexin Luo(罗杰馨), Xi Wang(王曦)
  Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures
    Chin. Phys. B   2016 Vol.25 (11): 118503-118503 [Abstract] (560) [HTML 1 KB] [PDF 1579 KB] (307)
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